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 - Tuner ALV-DVBH1 - rambus 3600 Tbit device - DDR2 DIMM ecc 800mhz - 25- nm flash- memory -


uspct is your : Video card - cpu - memory - Hard drive - power supply unit source


POSTER: news   ||   TUNER ALV-DVBH1

DATE:2007-02-13

Reduction in the energy consumption, obviously, became unique leit-motif in the development of the most diverse building blocks of contemporary electronic engineering. Recently we told about the new generation of memory nOVeA, on 30% exceeding according to this index of its predecessor, small energy consumption was named one of key special features of the microprocessors raza XLS, and today about the high-speed transceiver of sequential system bus, which consumes record little energy reported the company rambus.

In the sector of analog and hybrid chips relay race catches the company alvand technologies, which announced the production of the family tuners Humming- B. new product are calculated for the method of mobile telecasting on standard digital video broadcasting-Handheld (DVB- H). Tuner ALV-DVBH1, which opened family, is the chip, optimized for the integration in the system on microcircuit (system-on- a -chip). In the photograph is shown the demo card, built on the base of ALV-DVBH1.

Tuner ALV-DVBH1

, Besides the small energy consumption, the support of several ranges DVB- H is the important special feature of tuner. Furthermore, chip ALV-DVBH1 is compatible with the models of demodulators popular in the branch, and has very small size. All this, as it is assumed, it will be able to increase its attractiveness in the eyes of developers of single-hull tuners for portable consumer electronics: cell phones, smart phone, universal players. As producer asserts, family Humming- B uses the incomparable experience alvand in the field of creating the analog circuits for qualitative video in the television receivers of high clearness.


Tuner ALV-DVBH1

Tuner ALV-DVBH1

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TUNER ALV-DVBH1

POSTER: news   ||   RAMBUS 3600 TBIT DEVICE

DATE:2007-02-13

The company rambus, which is specialized in the solutions in the region of high-speed architectures, promulgated the new development, which makes possible to decrease the energy consumption of platforms, which operate with data with the speeds in the order of several gigabits per second. On the information Of rambus, for its specialists it was possible to triply decrease the energy consumption in comparison with the traditional realizations of sequential system bus, after preserving high performance. The work of test transceiver was under laboratory conditions demonstrated, capable of transmitting more than 3600 Tbit given (which is equivalent to the volume of approximately 100000 usual DVD) with the expenditures of energy, equal to two small batteries AA.

Documentary evidence of the results project will be presented to the public on 14 February at the conference international solid state circuits conference (ISSCC).

The guarantee of reduction in the energy consumption, as it was communicated, became systems approach to the architecture of transceiver. Analyzing the distribution of energy consumption in the existing developments, the specialists Of rambus created test 90 nm chip, which ensures the speed of 6,25 Gbit/s. The energy consumption of new product is 14 mW, which is equivalent to 2,2 mW per gigabit per second.

It is assumed that development will be possible to begin to operate in the promising parallel and sequential system buses for the applications, sensitive to the energy consumption.

Let us recall, last the achievements Of rambus in the region of the architectural solutions for the subsystems of memory were shown within the conference DesignCon 2007, past in USA two weeks ago.


rambus 3600 Tbit device

rambus 3600 Tbit device

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RAMBUS 3600 TBIT DEVICE

POSTER: news   ||   DDR2 DIMM ECC 800MHZ

DATE:2007-02-13

Yesterday the company super talent technology declared about the release of its new memory modules with errors correction   (ECC registered DDR2), which work at the frequency of 800 MHz.

Modules has 240 contact DDR2 DIMM. In each of 18 chips memory there is 64Mbit used x 8, packed in the BGA- case. The volume of such modules is 1 Gb.

DDR2 DIMM ecc 800mhz

T800RB1G are intended for the use in the highly productive servers. They at present already underwent testing in the composition of system tyan thunder n3600R (S2912).

The new mmemory Of super talent technology are produced at the personal plant of company, located in the silicic valley (speech, obviously, about assembling of modules, but not production of chips).

Each of them passes testing by hand, which ensures the high level of reliability, critical for servers platforms.

Price of T800RB1G for the distributers company will be 139 dollars.


DDR2 DIMM ecc 800mhz

DDR2 DIMM ecc 800mhz

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DDR2 DIMM ECC 800MHZ

POSTER: news   ||   25- NM FLASH- MEMORY

DATE:2007-02-12

 As we recently reported, the company toshiba intends to begin the production of flash- memory on 56- nm standards and to compose the competition to samsung in the unique technological race. Both producers of flash- memory is ready to defy the company micron, which stated about the creation of 25- nm microcircuit NAND flash- memory.

25- nm flash- memory

On this reported the President, executive director of company (Steve appleton) in the course of press conference with analysts, after demonstrating the photograph of prototype of the 25- nm flash- memory, created in the laboratory. According to appleton, 25- nm standards can be inculcated in the mass production for three years.

25- nm flash- memory

For the present basic tool of fight from Samsung, Toshiba, and also Hynix, are 50- nm 4- Gbit chip NAND flash- memory, created by Micron together with Intel last year. Soon after the communication Of micron and Intel, Samsung during September reported about the creation of prototype 32- nm solution, with the observance of standards 32 nm with the technology the company charge trap flash (CTF).

Technological race, notes source, occurs against the background of the completely unfavorable (for producers) situation – already in this year it is expected reduction in prices of flash- memory to 65% in view of overproduction NAND. And if the previously market NAND for flash- memory appeared sufficiently well against the background market DRAM, then analysts predict, that reduction in prices on NAND flash- memory will be stronger than even on DRAM, where the seasonal decrease in prices, according to the data of different producers, was from 10 to 30%.


25- nm flash- memory

25- nm flash- memory

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25- NM FLASH- MEMORY

uspct is your : Video card - cpu - memory - Hard drive - power supply unit source




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