fm22l16

New product is made on technical process CMOS, developed in Texas Of instruments, with the application of standards 130 nm. At the basis FRAM (energy-independent ferroelectric memory with the arbitrary access) â€“ the improved architecture of cell, created by the specialists ramtron international, which occupies leading position in the region of developing the corresponding technologies.
On the assertion of producer, the represented microcircuits have the density of 4 Mbit maximum at the given moment. The product, which received designation FM22L16, get power from one source by voltage 2,7-3,6 v, has parallel interface and is release in the 44- contact case of type TSOP. Among the advantages of new product, specified on the special features of technology FRAM, the company calls high speed operation, practically unlimited number of cycles reading and record, small energy consumption. According to arrangement and designation of conclusions new product compatible with microcircuits asynchronous static memory with arbitrary access (SRAM), therefore, first of all, it is oriented to application in constructions, where it adapts BY SRAM, in that number, in controllers, net equipment, devices for storing data, MFU, navigators.

Logical organization FM22L 16- 256K x 16. Time of access is 55 ns, the duration of cycle is 110 ns. Record and reading is executed out with speed of system bus, without any delays. The declared number of cycles of rerecording is not less than 100 trillions. The storage time of data in the absence of supply voltage is 10 years. On the operating speed and the energy consumption new memory exceeds memory of type SRAM. Thus, in the regimes of reading and record consumes 18 mA, in the regime of energy-economy 5h A.

Are thus far accessible familiarizing models FM22L16. The limited deliveries are planned to the third quarter, and mass production must begin in the fourth quarter. Price of product is 19 dollars for the piece in the party made of 10000 pieces.