phase memory hitachi

phase memory hitachi

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phase memory hitachi

POSTER: computer news || PHASE MEMORY HITACHI

DATE:2007-02-20

The new generation of energy-independent memory, which is characterized by the high speed writing, high speed operation and small energy consumption, created by specialists hitachi and Renesas technology. Companies represented the module with density 512 KB, that works with voltage 1,5 v, which demonstrated record and reading at a rate of 416 KB/s with the time of access 20 ns. In the development found a use the created previously technology weak element of memory, constructed on the change phase state. The current record of memory is 100 A.
New memory will be used as built in energy-independent memory micro-controllers and to system-on- microcircuit.

The idea of memory, built on the change phase state, or phase memory consists in the fact that the material, utilized for preparing the information layer, can assume two states, that are distinguished by the electrical properties, in particular, by resistance. The high resistance, characteristic of amorphous state, presents logical 1 - low, characteristic of crystalline state, designates logical 0. The short-term heating of the section layer is used for the passage of one state to another.

Experimental 512- KB module was prepared with the aid of the modified by 130- nm CMOS- process.

phase memory hitachi

PHASE MEMORY HITACHI

uspct is your : Video card - cpu - memory - Hard drive - power supply unit source

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