25- nm flash- memory

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POSTER: news   ||   25- NM FLASH- MEMORY	DATE:2007-02-12
As we recently reported, the company toshiba intends to begin the production of flash- memory on 56- nm standards and to compose the competition to samsung in the unique technological race. Both producers of flash- memory is ready to defy the company micron, which stated about the creation of 25- nm microcircuit NAND flash- memory. On this reported the President, executive director of company (Steve appleton) in the course of press conference with analysts, after demonstrating the photograph of prototype of the 25- nm flash- memory, created in the laboratory. According to appleton, 25- nm standards can be inculcated in the mass production for three years. For the present basic tool of fight from Samsung, Toshiba, and also Hynix, are 50- nm 4- Gbit chip NAND flash- memory, created by Micron together with Intel last year. Soon after the communication Of micron and Intel, Samsung during September reported about the creation of prototype 32- nm solution, with the observance of standards 32 nm with the technology the company charge trap flash (CTF). Technological race, notes source, occurs against the background of the completely unfavorable (for producers) situation – already in this year it is expected reduction in prices of flash- memory to 65% in view of overproduction NAND. And if the previously market NAND for flash- memory appeared sufficiently well against the background market DRAM, then analysts predict, that reduction in prices on NAND flash- memory will be stronger than even on DRAM, where the seasonal decrease in prices, according to the data of different producers, was from 10 to 30%.	25- NM FLASH- MEMORY

	uspct is your : Video card - cpu - memory - Hard drive - power supply unit source

Related news:
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IBM 22nm EUV (2007-02-26)
25- nm flash- memory (2007-02-12)
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AMD 45 nm technical process (2007-02-05)
Toshiba 52-nm memory (2007-01-25)
NEC 55- nm platform CB-55L (2007-01-22)

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