high- k dielectrics

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POSTER: computer news   ||   HIGH- K DIELECTRICS	DATE:2007-01-31
After the declaration from Intel about its fast failure of silicon dioxide in favor of dielectrics with the high dielectric constant (high- k) with the production of processors on the 45- nm to standards, competitors decided to lay out on the table and their card. IBM and AMD together with its partners for the development, Sony and Toshiba, presented their new technology, which uses high- k dielectrics and transistors with the metallic lock. The combination of dielectric lock on the basis of material high- k and metal electrodes ensures a increase in the control current more than by 20% and the corresponding increase the performance of transistors. At the same time more than in 5  times is reduced current leak from the source to the drain, i.e. is reduced the energy consumption of transistor. Since new transistors are less than their predecessors, then for their start and disconnection it is necessarily less than the electric power, which makes it possible to reduce the active voltage of switching by approximately 30%. IBM declared that its own production on the 45- nm technology with the use high- k dielectrics it will begin in 2008 at the factory, located in the state of New York. The maxims apropos what value will have new technology for the prolongation of the life of Moore's law we let us lower. Those desiring to estimate the scale of event can read our material, dedicated to the presentation of the analogous technology intel.	HIGH- K DIELECTRICS

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