ferroelectric random access memory

Epson and Fujitsu promulgated the results of joint project on the creation of new generation of ferroelectric memory (FRAM, Ferroelectric random access memory), a year before last e initiated during June.
Let us recall that at the basis of the new type of the energy-independent memory ferroelectric effect, which is consisted in the retention by the local sections of the dielectric film of electrical polarization into the absence of electric field, lies.

Within the framework joint project, companies created the technology of molding, working and evaluation of the characteristics of new ferroelectric film, and also the technology of production high(ly)-integrated FRAM â€“ the speed of the integration of elements is four times more than in the previous generation FRAM- chips. Let us recall also that the ferroelectric layer can be added in the form of additional development stage of semiconductor plates on the standard process, which considerably facilitates the production of chips of the new type memory. It is also asserted that tN memory units created on the new technology ensure the high reliability â€“ not less than 100 trln. the cycles of reading/record.

According to the data of source, Epson it is intended to combine those obtained of within the framework joint from Fujitsu work results with its operating times in the field of economical integrated microcircuits for the creation of solutions, aimed at the application in the portable devices, which are fed from the batteries.

Fujitsu is, in turn, intended to be concentrated in the mass production of chips on the new technology with the purpose to make FRAM moderately-priced. However, until it communicates, when on the market appear the first microcircuits with the logotype fujitsu. It is necessary to note that Fujitsu and Epson it is necessary to exert efforts in order to overtake the company ramtron (which he is pioneer in this region and in assortment of which already there is 512- kbits chips). From other side, the competition is always good.

Ferroelectric random access memory

FERROELECTRIC RANDOM ACCESS MEMORY