toshiba 52-nm memory

The Japanese subdivision Of toshiba reported that the company was ready to be contended from Samsung, since it was equaled with it in the calculation, after representing its version of MLC NAND flash- memory with capacity 2 Gb. However, the announcement of the new samsung relates on the time even to March of last year, and the version of the capacious memory toshiba is shown only today.

In the plans of technological union sanDisk-Toshiba show 52- nm memory, but thus far was demonstrated by 56- nm version.

Demand on flash- memory stably grows, since the new devices of user electronics again and again appear at the market, ready to swallow any volume, to which their owner will have enough money. By undoubted Heath future sales and stimulus for production and sales to memory will become the new development of iPhone company apple.

To begin deliveries is of 2 Gb chips memory the company toshiba is intended during March of this year. They are produced with the application of standards 56- nm technical process. During April 2007 it is already planned to leave to the volumes of deliveries in 300 thousand units per month.

The new chips memory, produced on 50- and 56- nm standards, have lower energy consumption than the previous models, produced with application of 60- and 70- nm n. nevertheless, obviously and on them still there is a great demand, since from the end of January Toshiba plans to begin the mass production 70- nm chips with the capacity of 1 Gb.

Parameters of the new product memory toshiba:

Part number: TC58NVG 3d1DTG00 and TC58NVG4D1DTG00
Volume: 8/16 Gbit
Supply voltage: 2,7-3,6 v
Time to access: 50 s (max.)
Packing: 48- contact TSOP type I
Sizes: 12x20x1,2 mm

In 2008 the company toshiba together with its partner sanDisk is intended to engage to 40% of market for flash- memory.

Toshiba 52-nm memory

TOSHIBA 52-NM MEMORY